Usage/Application: In Solar Cell
Wafer Diameter: 3 inch
Material: Silicon
Crystal Orientation: <110>
Material: Silicon
Brand: Ultrananotech
Usage/Application: Power
Mounting Type: Wall
Wafer Diameter: 4 inch
Crystal Orientation: <100>
Type: P Type
Resistivity: 10-30 ohm-cm
Stock no: NS6130-10-1001
CAS: 7440-21-3
Diameter: 4"
Thickness: 450um
Purity: 99 %
CAS: Yes
Stock no: 769OI
Polished: Yes
Doping: Boron
Purity: >99.9%
CAS: 7440-21-3
Stock no: MNS 00012
purity: 99.9%
Packing: As per requirement
Packing Size: As per requirement
product: silicon wafer
Packaging Size: 100 Kg
Grade: SolargradeElectronicgrade
Purity: 5N/9N/12N
Hardness: Materialdepends
Pack Type: Vaccum Bag
Shape: Round
Thickness: 0.5 mm
Usage: Research
Wafer Diameter: 200 mm
Handle Thickness Tolerance: 5 micrometre
Crystal Orientation: Any
Type: Any
CAS: 7440-21-3
Purity: 99.99%
Diameter: 8 inch
Thickness: 500 micron
Seller Type
Doping: Undoped
Orientation: <100>
Growth Method: CZ
Front side surface: Polished
Wafer Diameter: 12 inch
Crystal Orientation: <100>
Type: N Type
Resistivity: 0.001 Ohm cm
Form: Waffer
Purity: 99.9%
Material: Si Waffers
Item name: Si Waffers
Orientation: <100>
Resistivity: 1-30 Ohm-cm
Wafer Thickness: 23.6 - 25.2 mill
Roughness: 2nm
Usage/Application: Research
Packaging Size: 25
Doping: Boron, Arsenic
Grade: Prime
Product Size: 4 Inch
Thickness: 525 Micron
Usage: Commonly used in the semiconductor industry for various microelectronic device applications
Resistivity: 10 cm
Growth Method: CZ
Conductivity type: P
Crystal Orientation: 100 +- 2* degree
Width (Flat to Flat Length): 210 +- .25* mm
Wafer Diameter: 2 inch
Crystal Orientation: <111>
Type: N Type
Thickness: 300 um
Cas No.: 409-21-2
Material: Silicon Carbide Wafer
Country of Origin: Made in India
Type: N-type/P-type As Requirements
Resistivity: 1-10ohm/cm
Thickness: 180-1000 um (+/-25) As required
Grade: Prime / Test / Dummy grade